- RS Stock No.:
- 125-8051
- Mfr. Part No.:
- IXXK110N65B4H1
- Brand:
- IXYS
On back order for despatch 06/05/2024, delivery within 7 working days from despatch date.
Added
Price (ex. GST) Each
$32.37
(exc. GST)
$37.23
(inc. GST)
Units | Per unit |
1 - 6 | $32.37 |
7 - 12 | $32.10 |
13 + | $31.42 |
- RS Stock No.:
- 125-8051
- Mfr. Part No.:
- IXXK110N65B4H1
- Brand:
- IXYS
Legislation and Compliance
Product Details
IGBT Discretes, IXYS
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specifications
Attribute | Value |
---|---|
Maximum Continuous Collector Current | 570 A |
Maximum Collector Emitter Voltage | 650 V |
Maximum Gate Emitter Voltage | ±20V |
Maximum Power Dissipation | 880 W |
Number of Transistors | 1 |
Package Type | TO-264 |
Mounting Type | Through Hole |
Channel Type | N |
Pin Count | 3 |
Switching Speed | 10 → 30kHz |
Transistor Configuration | Single |
Dimensions | 20.3 x 5.3 x 26.6mm |
Minimum Operating Temperature | -55 °C |
Energy Rating | 3mJ |
Maximum Operating Temperature | +175 °C |