N-Channel MOSFET, 16 A, 60 V, 8-Pin 1212 Vishay Siliconix SiS106DN-T1-GE3
- RS Stock No.:
- 178-3692
- Mfr. Part No.:
- SiS106DN-T1-GE3
- Brand:
- Vishay Siliconix
Discontinued product
- RS Stock No.:
- 178-3692
- Mfr. Part No.:
- SiS106DN-T1-GE3
- Brand:
- Vishay Siliconix
Technical data sheets
Legislation and Compliance
RoHS Status: Not Applicable
- COO (Country of Origin):
- CN
Product Details
TrenchFET® Gen IV power MOSFET
Tuned for the lowest RDS - Qoss FOM
Tuned for the lowest RDS - Qoss FOM
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 16 A |
| Maximum Drain Source Voltage | 60 V |
| Series | TrenchFET |
| Package Type | 1212 |
| Mounting Type | Surface Mount |
| Pin Count | 8 |
| Maximum Drain Source Resistance | 20 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 2V |
| Minimum Gate Threshold Voltage | 4V |
| Maximum Power Dissipation | 24 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | ±20 V |
| Number of Elements per Chip | 1 |
| Width | 3.15mm |
| Transistor Material | Si |
| Maximum Operating Temperature | +150 °C |
| Typical Gate Charge @ Vgs | 8.9 nC @ 10 V |
| Length | 3.15mm |
| Height | 1.07mm |
| Minimum Operating Temperature | -55 °C |
| Forward Diode Voltage | 1.2V |