IGBT Modules

An IGBT module (insulated-gate bipolar transistor) consists of one or more IGBTs and is used in many types of industrial equipment due to its reliability. IGBT transistors are a cross between bipolar junction transistors (BJTs) and MOSFET. They are highly efficient and fast switching plus they have high current and low saturation voltage characteristics.

IGBT transistors are a three-terminal semiconductor device used as a switching element in power converters and variable speed drives to stop or allow power flow. IGBT transistors are controlled by a metal oxide semiconductor gate structure.

IGBT modules are widely used for switching electrical power in applications such as inverters, welding, motors, power conditioners, trains and uninterruptible power supplies.

A high-speed IGBT module is a product suitable for applications with switching frequencies between 20k and 50 kHz such as power supplies for medical equipment, welding machines, and induction heating. They include a boost chopper module and a half-bridge module.

IGBT modules have different configurations such as dual, 3-level, booster, common emitter, single switch, six-pack, chopper, PIM, PIM three-phase input rectifier, twelve pack, four pack and diode.

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Description Price Configuration Transistor Configuration Maximum Continuous Collector Current Maximum Collector Emitter Voltage Maximum Gate Emitter Voltage Number of Transistors Mounting Type Package Type Pin Count Switching Speed Maximum Power Dissipation Dimensions Height Length
RS Stock No. 168-4631
Mfr. Part No.6MBI450V-120-50
$1,740.15
Each (In a Box of 2)
units
3 Phase Bridge 3 Phase 450 A 1200 V ±20V - PCB Mount M629 29 - 2.25 kW 162 x 150 x 17mm 17mm 162mm
RS Stock No. 178-1384
Mfr. Part No.FS35R12W1T4B11BOMA1
BrandInfineon
$57.651
Each (In a Tray of 24)
units
3 Phase Bridge 3 Phase 65 A 1200 V ±20V - Panel Mount AG-EASY1B-1 - - 225 W 33.8 x 48 x 12mm 12mm 33.8mm
RS Stock No. 168-4509
Mfr. Part No.MWI200-06A8
BrandIXYS
$229.262
Each (In a Box of 5)
units
3 Phase Bridge 3 Phase 225 A 600 V ±20V - PCB Mount - 21 - - 122 x 62 x 17mm 17mm 122mm
RS Stock No. 145-9513
Mfr. Part No.FF150R12YT3BOMA1
BrandInfineon
$71.20
Each (In a Tray of 20)
units
Series Series 200 A 1200 V ±20V - PCB Mount EASY2 9 1MHz 625 W 55.9 x 39.6 x 17mm 17mm 55.9mm
RS Stock No. 687-4955
Mfr. Part No.SKM150GAR12T4
BrandSemikron
$139.98
Each
units
Single Single 232 A 1200 V ±20V - Panel Mount SEMITRANS2 5 - - 94 x 34 x 30.1mm 30.1mm 94mm
RS Stock No. 838-6848
Mfr. Part No.F3L200R07PE4BOSA1
BrandInfineon
$253.00
Each
units
Series Series 200 A 650 V ±20V - PCB Mount ECONO4 20 1MHz 680 W 130 x 70.6 x 17mm 17mm 130mm
RS Stock No. 124-8794
Mfr. Part No.FS50R12KT4B15BOSA1
BrandInfineon
$115.589
Each (In a Box of 10)
units
3 Phase Bridge 3 Phase 50 A 1200 V ±20V - PCB Mount Econo2 28 1MHz 280 W 107.5 x 45 x 17mm 17mm 107.5mm
RS Stock No. 146-4402
Mfr. Part No.IXYN30N170CV1
BrandIXYS
$54.46
Each
units
Dual Emitter Single 80 A 1700 V ±20V 1 Surface Mount SOT-227B 4 - 680 W 38.23 x 25.42 x 9.6mm 9.6mm 38.23mm
RS Stock No. 917-3387
Mfr. Part No.STGIB15CH60TS-E
$21.00
Each
units
Array 3 Phase 20 A 600 V - - Through Hole SDIP2B 26 - 81 W 38 x 24 x 3.5mm 3.5mm 38mm
RS Stock No. 838-6844
Mfr. Part No.FD300R06KE3HOSA1
BrandInfineon
$156.93
Each
units
Single Single 400 A 600 V ±20V - Panel Mount 62MM Module 7 1MHz 940 W 106.4 x 61.4 x 29mm 29mm 106.4mm
RS Stock No. 168-4565
Mfr. Part No.MIXA225PF1200TSF
BrandIXYS
$238.94
Each (In a Box of 3)
units
Dual Series 360 A 1200 V ±30V - PCB Mount SimBus F 11 - 1.1 kW 152 x 62 x 17mm 17mm 152mm
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The Insulated Gate Bipolar Transistor or IGBT is ...
Description:
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by ...
The Insulated Gate Bipolar Transistor or IGBT is ...
Description:
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by ...
The Insulated Gate Bipolar Transistor or IGBT is ...
Description:
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by ...
The Insulated Gate Bipolar Transistor or IGBT is ...
Description:
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by ...