IGBT Modules

An IGBT module (insulated-gate bipolar transistor) consists of one or more IGBTs and is used in many types of industrial equipment due to its reliability. IGBT transistors are a cross between bipolar junction transistors (BJTs) and MOSFET. They are highly efficient and fast switching plus they have high current and low saturation voltage characteristics.

IGBT transistors are a three-terminal semiconductor device used as a switching element in power converters and variable speed drives to stop or allow power flow. IGBT transistors are controlled by a metal oxide semiconductor gate structure.

IGBT modules are widely used for switching electrical power in applications such as inverters, welding, motors, power conditioners, trains and uninterruptible power supplies.

A high-speed IGBT module is a product suitable for applications with switching frequencies between 20k and 50 kHz such as power supplies for medical equipment, welding machines, and induction heating. They include a boost chopper module and a half-bridge module.

IGBT modules have different configurations such as dual, 3-level, booster, common emitter, single switch, six-pack, chopper, PIM, PIM three-phase input rectifier, twelve pack, four pack and diode.

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Description Price Configuration Transistor Configuration Maximum Continuous Collector Current Maximum Collector Emitter Voltage Maximum Gate Emitter Voltage Number of Transistors Mounting Type Package Type Pin Count Switching Speed Maximum Power Dissipation Dimensions Height Length
RS Stock No. 838-6970
Mfr. Part No.FS50R07N2E4BOSA1
BrandInfineon
$102.11
Each
units
3 Phase Bridge 3 Phase 70 A 650 V ±20V - PCB Mount ECONO2 28 1MHz 190 W 107.5 x 45 x 17mm 17mm 107.5mm
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The Insulated Gate Bipolar Transistor or IGBT is ...
Description:
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by ...
The Insulated Gate Bipolar Transistor or IGBT is ...
Description:
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by ...
The Insulated Gate Bipolar Transistor or IGBT is ...
Description:
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by ...
The Insulated Gate Bipolar Transistor or IGBT is ...
Description:
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by ...