Infineon BFP840ESDH6327XTSA1 NPN SiGe Bipolar Transistor, 35 mA, 2.25 V, 4-Pin SOT-343
This image is representative of the product range
- RS Stock No.:
- 826-8992
- Mfr. Part No.:
- BFP840ESDH6327XTSA1
- Manufacturer:
- Infineon
| units | Per unit | Per Pack* |
| 50 - 50 | $0.492 | $24.60 |
| 100 - 200 | $0.473 | $23.65 |
| 250 - 450 | $0.462 | $23.10 |
| 500 - 950 | $0.457 | $22.85 |
| 1000 + | $0.453 | $22.65 |
| *price indicative | ||
SiGe RF Bipolar Transistors, Infineon
| Attribute | Value |
| Transistor Type | NPN |
| Maximum DC Collector Current | 35 mA |
| Maximum Collector Emitter Voltage | 2.25 V |
| Package Type | SOT-343 |
| Mounting Type | Surface Mount |
| Maximum Power Dissipation | 75 mW |
| Transistor Configuration | Single |
| Maximum Collector Base Voltage | 2.9 V |
| Maximum Operating Frequency | 80 GHz |
| Pin Count | 4 |
| Number of Elements per Chip | 1 |
| Maximum Operating Temperature | +150 °C |
| Dimensions | 2 x 1.25 x 0.8mm |
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