Toshiba TTD1415B,S4X(S 2 Darlington Transistor PNP, 3 A 100 V HFE:1000, 3-Pin TO-220
- RS Stock No.:
- 144-5248
- Mfr. Part No.:
- TTD1415B,S4X(S
- Brand:
- Toshiba
Temporarily out of stock
- RS Stock No.:
- 144-5248
- Mfr. Part No.:
- TTD1415B,S4X(S
- Brand:
- Toshiba
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Toshiba | |
| Product Type | Darlington Transistor | |
| Maximum Continuous Collector Current Ic | 3A | |
| Maximum Collector Emitter Voltage Vceo | 100V | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Number of Elements per Chip | 2 | |
| Minimum DC Current Gain hFE | 1000 | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.5V | |
| Maximum Collector Base Voltage VCBO | 120V | |
| Transistor Polarity | PNP | |
| Maximum Emitter Base Voltage VEBO | 6V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Height | 15mm | |
| Standards/Approvals | No | |
| Series | TTD1415B | |
| Length | 100mm | |
| Maximum Collector Cut-off Current | 2μA | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Toshiba | ||
Product Type Darlington Transistor | ||
Maximum Continuous Collector Current Ic 3A | ||
Maximum Collector Emitter Voltage Vceo 100V | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Number of Elements per Chip 2 | ||
Minimum DC Current Gain hFE 1000 | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.5V | ||
Maximum Collector Base Voltage VCBO 120V | ||
Transistor Polarity PNP | ||
Maximum Emitter Base Voltage VEBO 6V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Height 15mm | ||
Standards/Approvals No | ||
Series TTD1415B | ||
Length 100mm | ||
Maximum Collector Cut-off Current 2μA | ||
Automotive Standard No | ||
- COO (Country of Origin):
- JP
NPN Darlington Transistors, Toshiba
Bipolar Transistors, Toshiba
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