Fuji Electric 2MBI100VA-060-50, M263 Series IGBT Module, 100 A max, 600 V, Surface Mount
- RS Stock No. 110-9124
- Mfr. Part No. 2MBI100VA-060-50
- Manufacturer Fuji Electric
Technical data sheets
Product Details
IGBT Modules 2-Pack, Fuji Electric
V-Series, 6th Generation Field-Stop
U/U4 Series, 5th Generation Field-Stop
S-Series, 4th Generation NPT
IGBT Discretes & Modules, Fuji Electric
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specifications
| Attribute | Value |
|---|---|
| Configuration | Series |
| Transistor Configuration | Series |
| Maximum Continuous Collector Current | 100 A |
| Maximum Collector Emitter Voltage | 600 V |
| Maximum Gate Emitter Voltage | ±20V |
| Channel Type | N |
| Mounting Type | Surface Mount |
| Package Type | M263 |
| Pin Count | 7 |
| Maximum Power Dissipation | 650 W |
| Dimensions | 94 x 34 x 30mm |
| Height | 30mm |
| Length | 94mm |
| Maximum Operating Temperature | +150 °C |
| Width | 34mm |
16 In stock for delivery within 5 working day(s)
Price (ex. GST) Each
$
76.33
(exc. GST)
$
87.78
(inc. GST)
units
Per unit
1 - 1
$76.33
2 - 4
$75.16
5 - 9
$74.03
10 - 19
$70.67
20 +
$67.72
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