- RS Stock No.:
- 124-8785
- Mfr. Part No.:
- FS75R12KT4B15BOSA1
- Brand:
- Infineon
This product is currently unavailable to backorder.
Unfortunately, we don’t have this product in stock and it’s not available to backorder at this time.
Price (ex. GST) Each (In a Box of 10)
$198.102
(exc. GST)
$227.817
(inc. GST)
units | Per unit | Per Box* |
10 - 40 | $198.102 | $1,981.02 |
50 + | $178.292 | $1,782.92 |
*price indicative |
- RS Stock No.:
- 124-8785
- Mfr. Part No.:
- FS75R12KT4B15BOSA1
- Brand:
- Infineon
Technical data sheets
Legislation and Compliance
- COO (Country of Origin):
- CN
Product Details
IGBT Modules, Infineon
The Infineon range of IGBT Modules offer low switching loss for switching up to 60 Khz frequencies.
The IGBTs span over a range of power modules like the ECONOPACK packages with collector emitter voltage at 1200V, PrimePACK IGBT half-bridge chopper modules with NTC up to 1600/1700V. The PrimePACK IGBTs can be found in Industrial, commercial, construction and agricultural vehicles. The N-Channel TRENCHSTOP TM and Fieldstop IGBT Modules are suitable for hard switching and soft switching applications such as Inverters, UPS and Industrial drives.
The IGBTs span over a range of power modules like the ECONOPACK packages with collector emitter voltage at 1200V, PrimePACK IGBT half-bridge chopper modules with NTC up to 1600/1700V. The PrimePACK IGBTs can be found in Industrial, commercial, construction and agricultural vehicles. The N-Channel TRENCHSTOP TM and Fieldstop IGBT Modules are suitable for hard switching and soft switching applications such as Inverters, UPS and Industrial drives.
Package styles include: 62mm Modules, EasyPACK, EconoPACKTM2/EconoPACKTM3/EconoPACKTM4
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specifications
Attribute | Value |
---|---|
Maximum Continuous Collector Current | 75 A |
Maximum Collector Emitter Voltage | 1200 V |
Maximum Gate Emitter Voltage | ±20V |
Maximum Power Dissipation | 385 W |
Configuration | 3 Phase Bridge |
Package Type | Econo2 |
Mounting Type | PCB Mount |
Channel Type | N |
Pin Count | 28 |
Switching Speed | 1MHz |
Transistor Configuration | 3 Phase |
Dimensions | 107.5 x 45 x 17mm |
Minimum Operating Temperature | -40 °C |
Maximum Operating Temperature | +150 °C |