Infineon FF150R12YT3BOMA1 Series IGBT Module, 200 A 1200 V, 9-Pin EASY2, PCB Mount
- RS Stock No.:
- 145-9513
- Mfr. Part No.:
- FF150R12YT3BOMA1
- Brand:
- Infineon
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Added
Price (ex. GST) Each (In a Tray of 20)
$100.635
(exc. GST)
$115.73
(inc. GST)
| Units | Per unit | Per Tray* |
| 20 - 80 | $100.635 | $2,012.70 |
| 100 + | $90.571 | $1,811.42 |
| *price indicative | ||
- RS Stock No.:
- 145-9513
- Mfr. Part No.:
- FF150R12YT3BOMA1
- Brand:
- Infineon
Technical data sheets
Legislation and Compliance
- COO (Country of Origin):
- CN
Product Details
IGBT Modules, Infineon
The Infineon range of IGBT Modules offer low switching loss for switching up to 60 Khz frequencies.
The IGBTs span over a range of power modules like the ECONOPACK packages with collector emitter voltage at 1200V, PrimePACK IGBT half-bridge chopper modules with NTC up to 1600/1700V. The PrimePACK IGBT’s can be found in Industrial, commercial, construction and agricultural vehicles. The N-Channel TRENCHSTOP TM and Fieldstop IGBT Modules are suitable for hard switching and soft switching applications such as Inverters, UPS and Industrial drives.
The IGBTs span over a range of power modules like the ECONOPACK packages with collector emitter voltage at 1200V, PrimePACK IGBT half-bridge chopper modules with NTC up to 1600/1700V. The PrimePACK IGBT’s can be found in Industrial, commercial, construction and agricultural vehicles. The N-Channel TRENCHSTOP TM and Fieldstop IGBT Modules are suitable for hard switching and soft switching applications such as Inverters, UPS and Industrial drives.
Package styles include: 62mm Modules, EasyPACK, EconoPACKTM2/EconoPACKTM3/EconoPACKTM4
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specifications
Attribute | Value |
|---|---|
| Maximum Continuous Collector Current | 200 A |
| Maximum Collector Emitter Voltage | 1200 V |
| Maximum Gate Emitter Voltage | ±20V |
| Maximum Power Dissipation | 625 W |
| Configuration | Series |
| Package Type | EASY2 |
| Mounting Type | PCB Mount |
| Channel Type | N |
| Pin Count | 9 |
| Switching Speed | 1MHz |
| Transistor Configuration | Series |
| Dimensions | 55.9 x 39.6 x 17mm |
| Minimum Operating Temperature | -40 °C |
| Maximum Operating Temperature | +125 °C |