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IXYS MIXA450PF1200TSF, SimBus F , N-Channel Dual IGBT Transistor Module, 650 A max, 1200 V, PCB Mount

This image is representative of the product range


On back order for despatch 02/03/2021, delivery within 7 working days from despatch date.
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Price (ex. GST) Each (In a Box of 3)

$264.317

(exc. GST)

$303.965

(inc. GST)

units

Added

RS Stock No.:
146-1703
Mfr. Part No.:
MIXA450PF1200TSF
Manufacturer:
IXYS
COO (Country of Origin):
DE
unitsPer unitPer Box*
3 +$264.317$792.951
*price indicative

IGBT Modules, IXYS


IGBT Discretes & Modules, IXYS

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

AttributeValue
Transistor ConfigurationSeries
ConfigurationDual
Maximum Continuous Collector Current650 A
Maximum Collector Emitter Voltage1200 V
Maximum Gate Emitter Voltage±30V
Channel TypeN
Mounting TypePCB Mount
Package TypeSimBus F
Pin Count11
Maximum Power Dissipation2.1 kW
Dimensions152 x 62 x 17mm
Height17mm
Length152mm
Maximum Operating Temperature+150 °C
Minimum Operating Temperature-40 °C
Width62mm