- RS Stock No.:
- 168-4623
- Mfr. Part No.:
- 7MBP75RA-120-55
- Brand:
- Fuji Electric
Discontinued product
- RS Stock No.:
- 168-4623
- Mfr. Part No.:
- 7MBP75RA-120-55
- Brand:
- Fuji Electric
Technical data sheets
Legislation and Compliance
- COO (Country of Origin):
- JP
Product Details
IGBT Discretes, Fuji Electric
IGBT Discretes & Modules, Fuji Electric
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specifications
Attribute | Value |
---|---|
Maximum Continuous Collector Current | 75 A |
Maximum Collector Emitter Voltage | 1200 V |
Maximum Power Dissipation | 500 W |
Package Type | P 610 |
Configuration | 3 Phase |
Mounting Type | PCB Mount |
Channel Type | N |
Pin Count | 22 |
Transistor Configuration | 3 Phase |
Dimensions | 109 x 88 x 22mm |
Minimum Operating Temperature | -20 °C |
Maximum Operating Temperature | +100 °C |