Fuji Electric 2MBi200VH-120-50, M276 Series IGBT Module, 240 A max, 1200 V, Panel Mount

  • RS Stock No. 168-4634
  • Mfr. Part No. 2MBI200VH-120-50
  • Manufacturer Fuji Electric
Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
COO (Country of Origin): JP
Product Details

IGBT Modules 2-Pack, Fuji Electric

V-Series, 6th Generation Field-Stop
U/U4 Series, 5th Generation Field-Stop
S-Series, 4th Generation NPT

IGBT Discretes & Modules, Fuji Electric

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Specifications
Attribute Value
Transistor Configuration Series
Configuration Series
Maximum Continuous Collector Current 240 A
Maximum Collector Emitter Voltage 1200 V
Maximum Gate Emitter Voltage ±20V
Channel Type N
Mounting Type Panel Mount
Package Type M276
Pin Count 7
Maximum Power Dissipation 1.11 kW
Dimensions 108 x 62 x 30.5mm
Height 30.5mm
Length 108mm
Maximum Operating Temperature +150 °C
Width 62mm
Discontinued product