Fuji Electric 2MBi450VE-120-50, M277 Series IGBT Module, 520 A max, 1200 V, Panel Mount

  • RS Stock No. 168-4639
  • Mfr. Part No. 2MBI450VE-120-50
  • Manufacturer Fuji Electric
Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
COO (Country of Origin): JP
Product Details

IGBT Modules 2-Pack, Fuji Electric

V-Series, 6th Generation Field-Stop
U/U4 Series, 5th Generation Field-Stop
S-Series, 4th Generation NPT

IGBT Discretes & Modules, Fuji Electric

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Attribute Value
Configuration Series
Transistor Configuration Series
Maximum Continuous Collector Current 520 A
Maximum Collector Emitter Voltage 1200 V
Maximum Gate Emitter Voltage ±20V
Channel Type N
Mounting Type Panel Mount
Package Type M277
Pin Count 7
Maximum Power Dissipation 3.35 kW
Dimensions 110 x 80 x 30mm
Height 30mm
Length 110mm
Maximum Operating Temperature +150 °C
Width 80mm
Discontinued product