Infineon F475R12KS4B11BOSA1 Dual Half Bridge IGBT Module, 100 A 1200 V, 24-Pin ECONO2, PCB Mount
- RS Stock No.:
- 168-8761
- Mfr. Part No.:
- F475R12KS4B11BOSA1
- Brand:
- Infineon
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Added
Price (ex. GST) Each (In a Box of 10)
$246.373
(exc. GST)
$283.329
(inc. GST)
| Units | Per unit | Per Box* |
| 10 - 40 | $246.373 | $2,463.73 |
| 50 + | $221.736 | $2,217.36 |
| *price indicative | ||
- RS Stock No.:
- 168-8761
- Mfr. Part No.:
- F475R12KS4B11BOSA1
- Brand:
- Infineon
Legislation and Compliance
- COO (Country of Origin):
- CN
Product Details
IGBT Modules, Infineon
The Infineon range of IGBT Modules offer low switching loss for switching up to 60 Khz frequencies.
The IGBTs span over a range of power modules like the ECONOPACK packages with collector emitter voltage at 1200V, PrimePACK IGBT half-bridge chopper modules with NTC up to 1600/1700V. The PrimePACK IGBT’s can be found in Industrial, commercial, construction and agricultural vehicles. The N-Channel TRENCHSTOP TM and Fieldstop IGBT Modules are suitable for hard switching and soft switching applications such as Inverters, UPS and Industrial drives.
The IGBTs span over a range of power modules like the ECONOPACK packages with collector emitter voltage at 1200V, PrimePACK IGBT half-bridge chopper modules with NTC up to 1600/1700V. The PrimePACK IGBT’s can be found in Industrial, commercial, construction and agricultural vehicles. The N-Channel TRENCHSTOP TM and Fieldstop IGBT Modules are suitable for hard switching and soft switching applications such as Inverters, UPS and Industrial drives.
Package styles include: 62mm Modules, EasyPACK, EconoPACKTM2/EconoPACKTM3/EconoPACKTM4
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specifications
Attribute | Value |
|---|---|
| Maximum Continuous Collector Current | 100 A |
| Maximum Collector Emitter Voltage | 1200 V |
| Maximum Gate Emitter Voltage | ±20V |
| Maximum Power Dissipation | 500 W |
| Configuration | Dual Half Bridge |
| Package Type | ECONO2 |
| Mounting Type | PCB Mount |
| Channel Type | N |
| Pin Count | 24 |
| Switching Speed | 1MHz |
| Transistor Configuration | Dual Half Bridge |
| Dimensions | 107.5 x 45 x 17mm |
| Minimum Operating Temperature | -40 °C |
| Maximum Operating Temperature | +125 °C |