Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
COO (Country of Origin): MY
Product Details

The NXH100B120H3Q0 is a power integrated module (PIM) containing a dual boost stage consisting of two 50A/1200V IGBTs, two 20A/1200V SiC diodes, and two 25A/1600V anti-parallel diodes for the IGBTs. Two additional 25A/1600V bypass rectifiers used for inrush current limit are included. An on-board thermistor is included.

IGBT Specifications: VCE(SAT) = 1.77 V, ESW = 2200 uJ
Fast IGBT with low VCE(SAT) for high efficiency
25 A / 1600 V Bypass and Anti−parallel Diodes
Low VF bypass diodes for excellent efficiency in bypass mode
SiC Rectifier Specification: VF = 1.44 V
SiC Diode for high speed switching
Solder pin and press-fit pin options available
Flexible mounting
MPPT Boost Stage
Battery Charger Boost Stage

Attribute Value
Configuration Dual
Transistor Configuration Dual
Maximum Collector Emitter Voltage 1200 V
Maximum Gate Emitter Voltage ±20V
Channel Type N
Mounting Type Surface Mount
Package Type Q0BOOST
Pin Count 22
Maximum Power Dissipation 186 W
Dimensions 66.2 x 32.8 x 11.9mm
Height 11.9mm
Length 66.2mm
Maximum Operating Temperature +150 °C
Minimum Operating Temperature -40 °C
Width 32.8mm
8 In stock for delivery within 5 working day(s)
Price (ex. GST) Each
$ 108.50
(exc. GST)
$ 124.78
(inc. GST)
Per unit
1 - 1
2 - 5
6 - 11
12 - 19
20 +
Packaging Options: