onsemi NXH100B120H3Q0STGOS Dual IGBT Module 1200 V, 22-Pin Q0BOOST, Surface Mount

RS Stock No.:: 195-8770
Mfr. Part No.:: NXH100B120H3Q0STG
Brand:: onsemi

onsemi NXH100B120H3Q0STGOS Dual IGBT Module 1200 V, 22-Pin Q0BOOST, Surface Mount

On back order for despatch 05/07/2024, delivery within 7 working days from despatch date.

Added

Price (ex. GST) Each (In a Tray of 24)

$141.679

(exc. GST)

$162.931

(inc. GST)

Units	Per unit	Per Tray*
24 - 24	$141.679	$3,400.296
48 - 72	$138.138	$3,315.312
96 +	$136.012	$3,264.288
*price indicative

RS Stock No.:: 195-8770
Mfr. Part No.:: NXH100B120H3Q0STG
Brand:: onsemi

Technical data sheets

Datasheet NXH100B120H3Q0STG

Legislation and Compliance

Product Details

The NXH100B120H3Q0 is a power integrated module (PIM) containing a dual boost stage consisting of two 50A/1200V IGBTs, two 20A/1200V SiC diodes, and two 25A/1600V anti-parallel diodes for the IGBTs. Two additional 25A/1600V bypass rectifiers used for inrush current limit are included. An on-board thermistor is included.

IGBT Specifications: VCE(SAT) = 1.77 V, ESW = 2200 uJ
Fast IGBT with low VCE(SAT) for high efficiency
25 A / 1600 V Bypass and Anti−parallel Diodes
Low VF bypass diodes for excellent efficiency in bypass mode
SiC Rectifier Specification: VF = 1.44 V
SiC Diode for high speed switching
Solder pin and press-fit pin options available
Flexible mounting
Applications
MPPT Boost Stage
Battery Charger Boost Stage

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

Specifications

Attribute	Value
Maximum Collector Emitter Voltage	1200 V
Maximum Gate Emitter Voltage	±20V
Maximum Power Dissipation	186 W
Package Type	Q0BOOST
Configuration	Dual
Mounting Type	Surface Mount
Channel Type	N
Pin Count	22
Transistor Configuration	Dual
Dimensions	66.2 x 32.8 x 11.9mm
Minimum Operating Temperature	-40 °C
Maximum Operating Temperature	+150 °C