Fuji Electric 7MBP75RA-120-55, P 610 3 Phase IGBT Module, 75 A max, 1200 V, PCB Mount

  • RS Stock No. 716-5612
  • Mfr. Part No. 7MBP75RA-120-55
  • Manufacturer Fuji Electric
Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
Product Details

IGBT Discretes, Fuji Electric

IGBT Discretes & Modules, Fuji Electric

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Specifications
Attribute Value
Transistor Configuration 3 Phase
Configuration 3 Phase
Maximum Continuous Collector Current 75 A
Maximum Collector Emitter Voltage 1200 V
Channel Type N
Mounting Type PCB Mount
Package Type P 610
Pin Count 22
Maximum Power Dissipation 500 W
Dimensions 109 x 88 x 22mm
Height 22mm
Length 109mm
Maximum Operating Temperature +100 °C
Minimum Operating Temperature -20 °C
Width 88mm
17 In stock for delivery within 5 working day(s)
Price (ex. GST) Each
$ 401.89
(exc. GST)
$ 462.17
(inc. GST)
units
Per unit
1 - 9
$401.89
10 - 49
$377.65
50 - 99
$374.31
100 - 249
$370.66
250 +
$367.02
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The Insulated Gate Bipolar Transistor or IGBT is ...
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The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by ...
The Insulated Gate Bipolar Transistor or IGBT is ...
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The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by ...
The Insulated Gate Bipolar Transistor or IGBT is ...
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The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by ...