- RS Stock No.:
- 194-899
- Mfr. Part No.:
- IXGH32N170
- Brand:
- IXYS
On back order for despatch 10/12/2024, delivery within 7 working days from despatch date.
Added
Price (ex. GST) Each
$41.87
(exc. GST)
$48.15
(inc. GST)
Units | Per unit |
1 - 7 | $41.87 |
8 - 14 | $41.59 |
15 + | $40.79 |
- RS Stock No.:
- 194-899
- Mfr. Part No.:
- IXGH32N170
- Brand:
- IXYS
Technical data sheets
Legislation and Compliance
Product Details
IGBT Discretes, IXYS
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specifications
Attribute | Value |
---|---|
Maximum Continuous Collector Current | 75 A |
Maximum Collector Emitter Voltage | 1700 V |
Maximum Gate Emitter Voltage | ±20V |
Package Type | TO-247AD |
Mounting Type | Through Hole |
Channel Type | N |
Pin Count | 3 |
Transistor Configuration | Single |
Dimensions | 16.26 x 5.3 x 21.46mm |
Minimum Operating Temperature | -55 °C |
Maximum Operating Temperature | +150 °C |