Infineon IKP15N65F5XKSA1 IGBT, 30 A 650 V, 3-Pin TO-220, Through Hole

RS Stock No.:: 110-7724
Mfr. Part No.:: IKP15N65F5XKSA1
Brand:: Infineon

Infineon IKP15N65F5XKSA1 IGBT, 30 A 650 V, 3-Pin TO-220, Through Hole

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730 In stock for delivery within 7 working day(s)

Added

Price (ex. GST) Each (In a Pack of 5)

$5.682

(exc. GST)

$6.534

(inc. GST)

Units	Per unit	Per Pack*
5 +	$5.682	$28.41
*price indicative

RS Stock No.:: 110-7724
Mfr. Part No.:: IKP15N65F5XKSA1
Brand:: Infineon

Technical data sheets

Legislation and Compliance

Product Details

Infineon TrenchStop IGBT Transistors, 600 and 650V

A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 600 and 650V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.

• Collector-emitter voltage range 600 to 650V
• Very low VCEsat
• Low turn-off losses
• Short tail current
• Low EMI
• Maximum junction temperature 175°C

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

IGBT Discretes & Modules, Infineon

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Specifications

Attribute	Value
Maximum Continuous Collector Current	30 A
Maximum Collector Emitter Voltage	650 V
Maximum Gate Emitter Voltage	±20V
Maximum Power Dissipation	105 W
Package Type	TO-220
Mounting Type	Through Hole
Channel Type	N
Pin Count	3
Transistor Configuration	Single
Dimensions	10.36 x 4.57 x 15.95mm
Energy Rating	0.17mJ
Maximum Operating Temperature	+175 °C
Minimum Operating Temperature	-40 °C
Gate Capacitance	930pF