Renesas Electronics RJH65D27BDPQ-A0#T2 IGBT, 100 A 650 V, 3-Pin TO-247A, Through Hole
- RS Stock No.:
- 124-0907P
- Mfr. Part No.:
- RJH65D27BDPQ-A0#T2
- Brand:
- Renesas Electronics
Available for back order.
Added
Price (ex. GST) Each (Supplied in a Tube)
$13.45
(exc. GST)
$15.47
(inc. GST)
| Units | Per unit |
| 5 - 9 | $13.45 |
| 10 - 49 | $13.02 |
| 50 - 99 | $12.64 |
| 100 + | $12.31 |
- RS Stock No.:
- 124-0907P
- Mfr. Part No.:
- RJH65D27BDPQ-A0#T2
- Brand:
- Renesas Electronics
Technical data sheets
Legislation and Compliance
- COO (Country of Origin):
- CN
Product Details
IGBT Discretes, Renesas Electronics
IGBT Discretes & Modules
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specifications
Attribute | Value |
|---|---|
| Maximum Continuous Collector Current | 100 A |
| Maximum Collector Emitter Voltage | 650 V |
| Maximum Gate Emitter Voltage | ±30V |
| Maximum Power Dissipation | 375 W |
| Package Type | TO-247A |
| Mounting Type | Through Hole |
| Channel Type | N |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Dimensions | 15.94 x 5.02 x 21.13mm |
| Gate Capacitance | 2850pF |
| Maximum Operating Temperature | +175 °C |