Renesas Electronics RJP65T43DPM-00#T1 IGBT, 40 A 650 V, 3+Tab-Pin TO-3PFM

Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
COO (Country of Origin): MY
Product Details

IGBT Discretes, Renesas Electronics

IGBT Discretes & Modules

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Specifications
Attribute Value
Maximum Continuous Collector Current 40 A
Maximum Collector Emitter Voltage 650 V
Maximum Gate Emitter Voltage ±30V
Maximum Power Dissipation 68.8 W
Package Type TO-3PFM
Mounting Type Through Hole
Channel Type N
Pin Count 3+Tab
Transistor Configuration Single
Length 15.6mm
Width 5.5mm
Height 19.9mm
Dimensions 15.6 x 5.5 x 19.9mm
Maximum Operating Temperature +175 °C
Gate Capacitance 1550pF
32 In stock for delivery within 5 working day(s)
Price (ex. GST) Each (Supplied in a Tube)
$ 7.535
(exc. GST)
$ 8.665
(inc. GST)
units
Per unit
20 - 38
$7.535
40 - 198
$7.19
200 - 398
$6.89
400 +
$6.62
Packaging Options:
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