IXYS IXXH80N65B4H1 IGBT, 430 A 650 V, 3-Pin TO-247AD, Through Hole
- RS Stock No.:
- 125-8049
- Mfr. Part No.:
- IXXH80N65B4H1
- Brand:
- IXYS
1 In stock for delivery within 5 working day(s)
Added
Price (ex. GST) Each
$26.37
(exc. GST)
$30.33
(inc. GST)
| Units | Per unit |
| 1 - 7 | $26.37 |
| 8 - 14 | $26.04 |
| 15 + | $24.08 |
- RS Stock No.:
- 125-8049
- Mfr. Part No.:
- IXXH80N65B4H1
- Brand:
- IXYS
Technical data sheets
Legislation and Compliance
- COO (Country of Origin):
- PH
Product Details
IGBT Discretes, IXYS
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specifications
Attribute | Value |
|---|---|
| Maximum Continuous Collector Current | 430 A |
| Maximum Collector Emitter Voltage | 650 V |
| Maximum Gate Emitter Voltage | ±20V |
| Maximum Power Dissipation | 625 W |
| Number of Transistors | 1 |
| Package Type | TO-247AD |
| Mounting Type | Through Hole |
| Channel Type | N |
| Pin Count | 3 |
| Switching Speed | 5 → 30kHz |
| Transistor Configuration | Single |
| Dimensions | 16.1 x 5.2 x 21.3mm |
| Minimum Operating Temperature | -55 °C |
| Maximum Operating Temperature | +175 °C |
| Energy Rating | 5.2mJ |