Fuji Electric FGW40N120HD IGBT, 40 A 1200 V, 3-Pin TO-247

  • RS Stock No. 146-1725
  • Mfr. Part No. FGW40N120HD
  • Manufacturer Fuji Electric
Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
COO (Country of Origin): JP
Product Details

IGBT Discretes, Fuji Electric

IGBT Discretes & Modules, Fuji Electric

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Attribute Value
Maximum Continuous Collector Current 40 A
Maximum Collector Emitter Voltage 1200 V
Maximum Gate Emitter Voltage ±20V
Maximum Power Dissipation 340 W
Package Type TO-247
Mounting Type Through Hole
Channel Type N
Pin Count 3
Transistor Configuration Single
Dimensions 15.9 x 5.03 x 20.95mm
Maximum Operating Temperature +175 °C
Minimum Operating Temperature -40 °C
120 In stock for delivery within 7 working day(s)
Price (ex. GST) Each (In a Tube of 30)
$ 20.731
(exc. GST)
$ 23.841
(inc. GST)
Per unit
Per Tube*
30 +
*price indicative