ON Semiconductor ISL9V3040P3 IGBT, 21 A 450 V, 3-Pin TO-220AB

Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
COO (Country of Origin): US
Product Details

Discrete IGBTs, Fairchild Semiconductor

IGBT Discretes & Modules, Fairchild Semiconductor

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Specifications
Attribute Value
Maximum Continuous Collector Current 21 A
Maximum Collector Emitter Voltage 450 V
Maximum Gate Emitter Voltage ±14V
Maximum Power Dissipation 150 W
Package Type TO-220AB
Mounting Type Through Hole
Channel Type N
Pin Count 3
Transistor Configuration Single
Length 10.67mm
Width 4.7mm
Height 16.3mm
Dimensions 10.67 x 4.7 x 16.3mm
Minimum Operating Temperature -40 °C
Maximum Operating Temperature +175 °C
900 In stock for delivery within 5 working day(s)
Price (ex. GST) Each (In a Tube of 50)
$ 3.008
(exc. GST)
$ 3.459
(inc. GST)
units
Per unit
Per Tube*
50 +
$3.008
$150.40
*price indicative