ON Semiconductor NXH100B120H3Q0SG IGBT Module, 61 A 1200 V Case 180AJ (Pb-Free and Halide-Free) Solder Pins
- RS Stock No.:
- 245-6964P
- Mfr. Part No.:
- NXH100B120H3Q0SG
- Manufacturer:
- ON Semiconductor
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24 In stock for delivery within 7 working day(s)
Price (ex. GST) Each (Supplied in a Tray)
$135.42
(exc. GST)
$155.73
(inc. GST)
| units | Per unit |
| 2 - 3 | $135.42 |
| 4 - 7 | $133.31 |
| 8 - 11 | $130.96 |
| 12 + | $128.61 |
Packaging Options:
- RS Stock No.:
- 245-6964P
- Mfr. Part No.:
- NXH100B120H3Q0SG
- Manufacturer:
- ON Semiconductor
Technical data sheets
Legislation and Compliance
Product Details
The ON Semiconductor Dual Boost Power Module is a power module containing a dual boost stage. The integrated field stop trench IGBTs and SiC Diodes provide lower conduction losses and switching losses, enabling designers to achieve high efficiency and superior reliability.
1200 V Ultra Field Stop IGBTs
Low Reverse Recovery and Fast Switching SiC Diodes
1600 V Bypass and Anti parallel Diodes
Low Inductive Layout
Solderable Pins or Press Fit Pins
Thermistor options with pre applied thermal interface material and without pre applied TIM
Specifications
| Attribute | Value |
| Maximum Continuous Collector Current | 61 A |
| Maximum Collector Emitter Voltage | 1200 V |
| Maximum Gate Emitter Voltage | ±20V |
| Number of Transistors | 2 |
| Maximum Power Dissipation | 186 W |
| Package Type | Case 180AJ (Pb-Free and Halide-Free) Solder Pins |