onsemi NXH80B120MNQ0SNG IGBT Module Q0BOOST - Case 180AJ (Pb-Free and Halide-Free Solder Pins)
- RS Stock No.:
- 245-6990
- Mfr. Part No.:
- NXH80B120MNQ0SNG
- Brand:
- onsemi
On back order for despatch 29/10/2025, delivery within 7 working days from despatch date.
Added
Price (ex. GST) Each (In a Tray of 24)
$152.164
(exc. GST)
$174.989
(inc. GST)
| Units | Per unit | Per Tray* |
| 24 - 24 | $152.164 | $3,651.936 |
| 48 - 48 | $150.779 | $3,618.696 |
| 72 + | $148.702 | $3,568.848 |
| *price indicative | ||
- RS Stock No.:
- 245-6990
- Mfr. Part No.:
- NXH80B120MNQ0SNG
- Brand:
- onsemi
Technical data sheets
Legislation and Compliance
Product Details
Full SiC MOSFET Module | EliteSiC Two Channel Full SiC Boost, 1200 V, 80 mohm SiC MOSFET + 1200 V, 20 A SiC Diode Nickel-plated DBC
The ON Semiconductor Dual Boost Power Module is a power module containing a dual boost stage. The integrated SiC MOSFETs and SiC Diodes provide lower conduction losses and switching losses, enabling designers to achieve high efficiency and superior reliability.
1200 V 80 m SiC MOSFETs
Low Reverse Recovery and Fast Switching SiC Diodes
1600 V Bypass and anti parallel Diodes
Low Inductive Layout Solderable Pins Thermistor
These devices are Pb free, Halogen Free/BFR Free and are RoHS compliant
Low Reverse Recovery and Fast Switching SiC Diodes
1600 V Bypass and anti parallel Diodes
Low Inductive Layout Solderable Pins Thermistor
These devices are Pb free, Halogen Free/BFR Free and are RoHS compliant
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
Specifications
Attribute | Value |
|---|---|
| Number of Transistors | 2 |
| Maximum Power Dissipation | 69 W |
| Package Type | Q0BOOST - Case 180AJ (Pb-Free and Halide-Free Solder Pins) |