- RS Stock No.:
- 686-8348
- Mfr. Part No.:
- STGE200NB60S
- Brand:
- STMicroelectronics
On back order for despatch 03/06/2024, delivery within 7 working days from despatch date.
Added
Price (ex. GST) Each
$62.56
(exc. GST)
$71.94
(inc. GST)
Units | Per unit |
1 - 2 | $62.56 |
3 - 4 | $61.70 |
5 + | $60.45 |
- RS Stock No.:
- 686-8348
- Mfr. Part No.:
- STGE200NB60S
- Brand:
- STMicroelectronics
Technical data sheets
Legislation and Compliance
- COO (Country of Origin):
- CN
Product Details
IGBT Discretes, STMicroelectronics
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specifications
Attribute | Value |
---|---|
Maximum Continuous Collector Current | 200 A |
Maximum Collector Emitter Voltage | 600 V |
Maximum Gate Emitter Voltage | ±20V |
Package Type | ISOTOP |
Mounting Type | Panel Mount |
Channel Type | N |
Pin Count | 4 |
Transistor Configuration | Single |
Dimensions | 38.2 x 25.5 x 9.1mm |
Maximum Operating Temperature | +150 °C |
Minimum Operating Temperature | -55 °C |