ON Semiconductor ISL9V3040P3 IGBT, 21 A 450 V, 3-Pin TO-220AB

Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
Product Details

Discrete IGBTs, Fairchild Semiconductor

IGBT Discretes & Modules, Fairchild Semiconductor

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Specifications
Attribute Value
Maximum Continuous Collector Current 21 A
Maximum Collector Emitter Voltage 450 V
Maximum Gate Emitter Voltage ±14V
Maximum Power Dissipation 150 W
Package Type TO-220AB
Mounting Type Through Hole
Channel Type N
Pin Count 3
Transistor Configuration Single
Length 10.67mm
Width 4.7mm
Height 16.3mm
Dimensions 10.67 x 4.7 x 16.3mm
Minimum Operating Temperature -40 °C
Maximum Operating Temperature +175 °C
170 In stock for delivery within 5 working day(s)
Price (ex. GST) Each (In a Pack of 5)
$ 3.498
(exc. GST)
$ 4.023
(inc. GST)
units
Per unit
Per Pack*
5 - 20
$3.498
$17.49
25 - 95
$3.138
$15.69
100 - 245
$2.69
$13.45
250 - 495
$2.654
$13.27
500 +
$2.444
$12.22
*price indicative
Packaging Options:
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