N-Channel MOSFET, 28 A, 300 V, 3-Pin D2PAK onsemi FDB28N30TM
- RS Stock No.:
- 124-1330
- Mfr. Part No.:
- FDB28N30TM
- Brand:
- onsemi
On back order for despatch 23/04/2024, delivery within 7 working days from despatch date.
Added
Price (ex. GST) Each (On a Reel of 800)
$1.824
(exc. GST)
$2.098
(inc. GST)
| Units | Per unit | Per Reel* |
| 800 - 3200 | $1.824 | $1,459.20 |
| 4000 + | $1.641 | $1,312.80 |
| *price indicative | ||
- RS Stock No.:
- 124-1330
- Mfr. Part No.:
- FDB28N30TM
- Brand:
- onsemi
Technical data sheets
Legislation and Compliance
Product Details
UniFET™ N-Channel MOSFET, Fairchild Semiconductor
UniFET™ MOSFET is Fairchild Semiconductor's high voltage MOSFET family. It has the smallest on-state resistance among the planar MOSFETs, and also provides superior switching performance and higher avalanche energy strength. In addition, the internal gate-source ESD diode allows UniFET-II™ MOSFET to withstand over 2000V HBM surge stress.
UniFET™ MOSFETs are suitable for switching power converter applications, such as power factor correction (PFC), flat panel display (FPD) TV power, ATX (Advanced Technology eXtended) and electronic lamp ballasts.
UniFET™ MOSFETs are suitable for switching power converter applications, such as power factor correction (PFC), flat panel display (FPD) TV power, ATX (Advanced Technology eXtended) and electronic lamp ballasts.
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 28 A |
| Maximum Drain Source Voltage | 300 V |
| Package Type | D2PAK (TO-263) |
| Series | UniFET |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 129 mΩ |
| Channel Mode | Enhancement |
| Minimum Gate Threshold Voltage | 3V |
| Maximum Power Dissipation | 250 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -30 V, +30 V |
| Number of Elements per Chip | 1 |
| Width | 11.33mm |
| Maximum Operating Temperature | +150 °C |
| Length | 10.67mm |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 39 nC @ 10 V |
| Minimum Operating Temperature | -55 °C |
| Height | 4.83mm |