SiC N-Channel MOSFET, 35 A, 1000 V, 4-Pin TO-247-4 Wolfspeed C3M0065100K

RS Stock No.:: 125-3453
Mfr. Part No.:: C3M0065100K
Brand:: Wolfspeed

SiC N-Channel MOSFET, 35 A, 1000 V, 4-Pin TO-247-4 Wolfspeed C3M0065100K

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11 In stock for delivery within 7 working day(s)

Added

Price (ex. GST) Each

$38.47

(exc. GST)

$44.24

(inc. GST)

Units	Per unit
1 - 7	$38.47
8 - 39	$37.94
40 +	$31.22

RS Stock No.:: 125-3453
Mfr. Part No.:: C3M0065100K
Brand:: Wolfspeed

Technical data sheets

Legislation and Compliance

Product Details

Silicon Carbide Power MOSFET, C3M Series, Cree Inc.

New C3M Silicon Carbide (SiC) MOSFET technology
Minimum of 1000 V Drain-Source Breakdown Voltage across the entire operating temperature range
New low-impedance package with driver source
8 mm of creepage/clearance between Drain and Source
High-speed switching with low output capacitance
High blocking voltage with low Drain-Source On-State Resistance
Avalanche ruggedness
Fast intrinsic diode with low Reverse Recovery

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

MOSFET Transistors, Cree Inc.

Specifications

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	35 A
Maximum Drain Source Voltage	1000 V
Series	C3M
Package Type	TO-247-4
Mounting Type	Through Hole
Pin Count	4
Maximum Drain Source Resistance	90 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	3.5V
Minimum Gate Threshold Voltage	1.8V
Maximum Power Dissipation	113.5 W
Maximum Gate Source Voltage	-8 V, +19 V
Number of Elements per Chip	1
Transistor Material	SiC
Maximum Operating Temperature	+150 °C
Length	16.13mm
Typical Gate Charge @ Vgs	35 nC @ 15 V, 35 nC @ 4 V
Width	5.21mm
Minimum Operating Temperature	-55 °C
Height	23.6mm
Forward Diode Voltage	4.8V