N-Channel MOSFET, 11.5 A, 500 V, 3-Pin TO-220F onsemi FDPF12N50FT
- RS Stock No.:
- 145-4370
- Mfr. Part No.:
- FDPF12N50FT
- Brand:
- onsemi
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Unfortunately, we don’t have this product in stock and it’s not available to backorder at this time.
Added
Price (ex. GST) Each (In a Tube of 50)
$3.104
(exc. GST)
$3.57
(inc. GST)
| Units | Per unit | Per Tube* |
| 50 - 200 | $3.104 | $155.20 |
| 250 + | $2.794 | $139.70 |
| *price indicative | ||
- RS Stock No.:
- 145-4370
- Mfr. Part No.:
- FDPF12N50FT
- Brand:
- onsemi
Legislation and Compliance
Product Details
UniFET™ N-Channel MOSFET, Fairchild Semiconductor
UniFET™ MOSFET is Fairchild Semiconductor's high voltage MOSFET family. It has the smallest on-state resistance among the planar MOSFETs, and also provides superior switching performance and higher avalanche energy strength. In addition, the internal gate-source ESD diode allows UniFET-II™ MOSFET to withstand over 2000V HBM surge stress.
UniFET™ MOSFETs are suitable for switching power converter applications, such as power factor correction (PFC), flat panel display (FPD) TV power, ATX (Advanced Technology eXtended) and electronic lamp ballasts.
UniFET™ MOSFETs are suitable for switching power converter applications, such as power factor correction (PFC), flat panel display (FPD) TV power, ATX (Advanced Technology eXtended) and electronic lamp ballasts.
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 11.5 A |
| Maximum Drain Source Voltage | 500 V |
| Series | UniFET |
| Package Type | TO-220F |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 700 mΩ |
| Channel Mode | Enhancement |
| Minimum Gate Threshold Voltage | 3V |
| Maximum Power Dissipation | 42 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -30 V, +30 V |
| Transistor Material | Si |
| Number of Elements per Chip | 1 |
| Maximum Operating Temperature | +150 °C |
| Width | 4.9mm |
| Length | 10.36mm |
| Typical Gate Charge @ Vgs | 21 nC @ 10 V |
| Height | 16.07mm |
| Minimum Operating Temperature | -55 °C |