N-Channel MOSFET, 80 A, 75 V, 3-Pin TO-220 Infineon IPP052NE7N3GXKSA1
- RS Stock No.:
- 145-9266
- Mfr. Part No.:
- IPP052NE7N3GXKSA1
- Brand:
- Infineon
Discontinued product
- RS Stock No.:
- 145-9266
- Mfr. Part No.:
- IPP052NE7N3GXKSA1
- Brand:
- Infineon
Technical data sheets
Legislation and Compliance
- COO (Country of Origin):
- CN
Product Details
Infineon OptiMOS™3 Power MOSFETs, 60 to 80V
OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.
Fast switching MOSFET for SMPS
Optimized technology for DC/DC converters
Qualified according to JEDEC1) for target applications
N-channel, logic level
Excellent gate charge x R DS(on) product (FOM)
Very low on-resistance R DS(on)
Pb-free plating
Optimized technology for DC/DC converters
Qualified according to JEDEC1) for target applications
N-channel, logic level
Excellent gate charge x R DS(on) product (FOM)
Very low on-resistance R DS(on)
Pb-free plating
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 80 A |
| Maximum Drain Source Voltage | 75 V |
| Package Type | TO-220 |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 5.2 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 3.8V |
| Minimum Gate Threshold Voltage | 2.3V |
| Maximum Power Dissipation | 150 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Typical Gate Charge @ Vgs | 51 nC @ 10 V |
| Number of Elements per Chip | 1 |
| Length | 10.36mm |
| Width | 4.57mm |
| Maximum Operating Temperature | +175 °C |
| Transistor Material | Si |
| Series | OptiMOS 3 |
| Height | 15.95mm |
| Minimum Operating Temperature | -55 °C |