N-Channel MOSFET, 10 A, 600 V, 3-Pin TO-220 STMicroelectronics STP11NM60ND
- RS Stock No.:
- 168-7485
- Mfr. Part No.:
- STP11NM60ND
- Brand:
- STMicroelectronics
Available for back order.
Added
Price (ex. GST) Each (In a Tube of 50)
$7.003
(exc. GST)
$8.053
(inc. GST)
| Units | Per unit | Per Tube* |
| 50 - 50 | $7.003 | $350.15 |
| 100 - 150 | $6.828 | $341.40 |
| 200 + | $6.07 | $303.50 |
| *price indicative | ||
- RS Stock No.:
- 168-7485
- Mfr. Part No.:
- STP11NM60ND
- Brand:
- STMicroelectronics
Legislation and Compliance
Product Details
N-Channel FDmesh™ Power MOSFET, STMicroelectronics
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, STMicroelectronics
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 10 A |
| Maximum Drain Source Voltage | 600 V |
| Package Type | TO-220 |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 450 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 5V |
| Minimum Gate Threshold Voltage | 3V |
| Maximum Power Dissipation | 90 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -25 V, +25 V |
| Number of Elements per Chip | 1 |
| Width | 4.6mm |
| Typical Gate Charge @ Vgs | 30 nC @ 10 V |
| Maximum Operating Temperature | +150 °C |
| Transistor Material | Si |
| Length | 10.4mm |
| Height | 15.75mm |
| Series | FDmesh |