Dual N/P-Channel-Channel MOSFET, 3 A, 4 A, 30 V, 8-Pin SOIC Infineon IRF7309TRPBF
- RS Stock No.:
- 168-7929
- Mfr. Part No.:
- IRF7309TRPBF
- Brand:
- Infineon
On back order for despatch 26/07/2024, delivery within 7 working days from despatch date.
Added
Price (ex. GST) Each (On a Reel of 4000)
$0.613
(exc. GST)
$0.705
(inc. GST)
| Units | Per unit | Per Reel* |
| 4000 - 16000 | $0.613 | $2,452.00 |
| 20000 + | $0.552 | $2,208.00 |
| *price indicative | ||
- RS Stock No.:
- 168-7929
- Mfr. Part No.:
- IRF7309TRPBF
- Brand:
- Infineon
Technical data sheets
Legislation and Compliance
- COO (Country of Origin):
- PH
Product Details
Dual N/P-Channel Power MOSFET, Infineon
Infineon’s dual power MOSFETs integrate two HEXFET® devices to provide space-saving, cost-effective switching solutions in high component density designs where board space is at a premium. A variety of package options is available and designers can choose the Dual N/P-channel configuration.
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Specifications
Attribute | Value |
|---|---|
| Channel Type | N, P |
| Maximum Continuous Drain Current | 3 A, 4 A |
| Maximum Drain Source Voltage | 30 V |
| Package Type | SOIC |
| Series | HEXFET |
| Mounting Type | Surface Mount |
| Pin Count | 8 |
| Maximum Drain Source Resistance | 80 mΩ, 160 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 1V |
| Minimum Gate Threshold Voltage | 1V |
| Maximum Power Dissipation | 1.4 W |
| Transistor Configuration | Isolated |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Transistor Material | Si |
| Length | 5mm |
| Maximum Operating Temperature | +150 °C |
| Typical Gate Charge @ Vgs | 25 nC @ 4.5 V |
| Number of Elements per Chip | 2 |
| Width | 4mm |
| Height | 1.5mm |
| Minimum Operating Temperature | -55 °C |