N-Channel MOSFET, 300 A, 80 V, 8 + Tab-Pin HSOF Infineon IPT012N08N5ATMA1
- RS Stock No.:
- 170-2318
- Mfr. Part No.:
- IPT012N08N5ATMA1
- Brand:
- Infineon
Discontinued product
- RS Stock No.:
- 170-2318
- Mfr. Part No.:
- IPT012N08N5ATMA1
- Brand:
- Infineon
Technical data sheets
Legislation and Compliance
Product Details
Infineon MOSFET
The Infineon HSOF-8 surface mount N-channel MOSFET is a new age product with a drain-source resistance of 1.2mohm at a gate-source voltage of 10V. The MOSFET has continuous drain current of 300A. It has a maximum gate-source voltage of 20V and drain-source voltage of 80V. It has a maximum power dissipation of 375W. The MOSFET has a minimum and a maximum driving voltage of 6V and 10V respectively. It has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.
Features and Benefits
• 100% avalanche tested
• Excellent gate charge x RDS (on) product (FOM)
• Halogen free
• Highest system efficiency
• Ideal for high switching frequency
• Increased power density
• Lead (Pb) free plating
• Low voltage overshoot
• Operating temperature ranges between -55°C and 175°C
• Optimized for synchronous rectification
• Output capacitance reduction of up to 44%
• RDS (on) reduction of up to 44%
• Very low on resistance RDS (on)
• Excellent gate charge x RDS (on) product (FOM)
• Halogen free
• Highest system efficiency
• Ideal for high switching frequency
• Increased power density
• Lead (Pb) free plating
• Low voltage overshoot
• Operating temperature ranges between -55°C and 175°C
• Optimized for synchronous rectification
• Output capacitance reduction of up to 44%
• RDS (on) reduction of up to 44%
• Very low on resistance RDS (on)
Applications
• Adapter
• Light electric vehicles
• Low voltage drives
• Server power supplies
• Solar
• Telecommunication
• Light electric vehicles
• Low voltage drives
• Server power supplies
• Solar
• Telecommunication
Certifications
• ANSI/ESD S20.20:2014
• BS EN 61340-5-1:2007
• IEC61249-2-21
• JEDEC
• BS EN 61340-5-1:2007
• IEC61249-2-21
• JEDEC
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 300 A |
| Maximum Drain Source Voltage | 80 V |
| Package Type | HSOF |
| Mounting Type | Surface Mount |
| Pin Count | 8 + Tab |
| Maximum Drain Source Resistance | 1.7 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 3.8V |
| Minimum Gate Threshold Voltage | 2.2V |
| Maximum Power Dissipation | 375 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | 20 V |
| Number of Elements per Chip | 1 |
| Typical Gate Charge @ Vgs | 178 nC @ 10 V |
| Length | 10.1mm |
| Maximum Operating Temperature | +175 °C |
| Width | 10.58mm |
| Height | 2.4mm |
| Minimum Operating Temperature | -55 °C |
| Series | IPT012N08N5 |
| Forward Diode Voltage | 1.2V |