Dual N-Channel MOSFET, 26 A, 60 V, 8-Pin DFN onsemi NVMFD5C680NLWFT1G

RS Stock No.:: 172-3383
Mfr. Part No.:: NVMFD5C680NLWFT1G
Brand:: onsemi

Dual N-Channel MOSFET, 26 A, 60 V, 8-Pin DFN onsemi NVMFD5C680NLWFT1G

This product is currently unavailable to backorder.

Unfortunately, we don’t have this product in stock and it’s not available to backorder at this time.

Added

Price (ex. GST) Each (In a Pack of 25)

$2.396

(exc. GST)

$2.755

(inc. GST)

Units	Per unit	Per Pack*
25 - 350	$2.396	$59.90
375 - 725	$2.336	$58.40
750 +	$1.658	$41.45
*price indicative

RS Stock No.:: 172-3383
Mfr. Part No.:: NVMFD5C680NLWFT1G
Brand:: onsemi

Technical data sheets

Legislation and Compliance

Product Details

Automotive Power MOSFET in a 5x6mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection. MOSFET and PPAP capable suitable for automotive applications.

Small Footprint (5x6 mm)
Compact Design
Low rDS(on)
Minimize Conduction Loss
Low QG and Capacitance
Minimize Driver Losses
NVMFD5C446NLWF − Wettable Flank Option
Enhanced Optical Inspection
PPAP Capable

Applications
Solenoid driver
Low side / high side driver
Automotive engine controllers
Antilock braking systems

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

Specifications

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	26 A
Maximum Drain Source Voltage	60 V
Series	NVMFD5C680NL
Package Type	DFN
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	41 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	2.2V
Minimum Gate Threshold Voltage	1.2V
Maximum Power Dissipation	19 W
Maximum Gate Source Voltage	±20 V
Width	5.1mm
Number of Elements per Chip	2
Length	6.1mm
Maximum Operating Temperature	+175 °C
Typical Gate Charge @ Vgs	5 nC @ 10 V
Automotive Standard	AEC-Q101
Height	1.05mm
Forward Diode Voltage	1.2V
Minimum Operating Temperature	-55 °C