IRF520PBF N-Channel MOSFET, 9.2 A, 100 V, 3-Pin TO-220AB Vishay Siliconix

Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
COO (Country of Origin): HK
Product Details

N-Channel MOSFET, 100V to 150V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Specifications
Attribute Value
Channel Type N
Maximum Continuous Drain Current 9.2 A
Maximum Drain Source Voltage 100 V
Package Type TO-220AB
Mounting Type Through Hole
Pin Count 3
Maximum Drain Source Resistance 270 mΩ
Channel Mode Enhancement
Minimum Gate Threshold Voltage 2V
Maximum Power Dissipation 60 W
Transistor Configuration Single
Maximum Gate Source Voltage -20 V, +20 V
Number of Elements per Chip 1
Forward Diode Voltage 1.8V
Height 15.85mm
Width 4.7mm
Minimum Operating Temperature -55 °C
Transistor Material Si
Length 10.52mm
Typical Gate Charge @ Vgs 16 nC @ 10 V
Maximum Operating Temperature +175 °C
On back order for despatch 16/06/2020, delivery within 5 working days from despatch date.
Price (ex. GST) Each (On a Reel of 1000)
$ 1.606
(exc. GST)
$ 1.847
(inc. GST)
units
Per unit
Per Reel*
1000 +
$1.606
$1,606.00
*price indicative