N-Channel MOSFET, 350 mA, 100 V, 3-Pin TO-92 Microchip TN0110N3-G
- RS Stock No.:
- 177-9690
- Mfr. Part No.:
- TN0110N3-G
- Brand:
- Microchip
On back order for despatch 21/06/2024, delivery within 7 working days from despatch date.
Added
Price (ex. GST) Each (In a Bag of 1000)
$1.717
(exc. GST)
$1.975
(inc. GST)
| Units | Per unit | Per Bag* |
| 1000 - 4000 | $1.717 | $1,717.00 |
| 5000 + | $1.545 | $1,545.00 |
| *price indicative | ||
- RS Stock No.:
- 177-9690
- Mfr. Part No.:
- TN0110N3-G
- Brand:
- Microchip
Technical data sheets
Legislation and Compliance
- COO (Country of Origin):
- TW
Product Details
This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Low threshold - 2.0V max.
High input impedance
Low input capacitance - 50pF typical
Fast switching speeds
Low on-resistance
Free from secondary breakdown
Low input and output leakage
High input impedance
Low input capacitance - 50pF typical
Fast switching speeds
Low on-resistance
Free from secondary breakdown
Low input and output leakage
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 350 mA |
| Maximum Drain Source Voltage | 100 V |
| Package Type | TO-92 |
| Series | TN0110 |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 4.5 Ω |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 2V |
| Minimum Gate Threshold Voltage | 0.6V |
| Maximum Power Dissipation | 1 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | 20 V |
| Maximum Operating Temperature | +150 °C |
| Length | 5.08mm |
| Number of Elements per Chip | 1 |
| Width | 4.06mm |
| Minimum Operating Temperature | -55 °C |
| Height | 5.33mm |
| Forward Diode Voltage | 1.5V |