SiA110DJ-T1-GE3 N-Channel MOSFET, 12 A, 100 V TrenchFET, 6-Pin SC-70 Vishay Siliconix

Technical data sheets
Legislation and Compliance
RoHS Status: Not Applicable
COO (Country of Origin): CN
Product Details

TrenchFET® Gen IV power MOSFET
Tuned for the lowest RDS - Qoss

Attribute Value
Channel Type N
Maximum Continuous Drain Current 12 A
Maximum Drain Source Voltage 100 V
Package Type SC-70
Mounting Type Surface Mount
Pin Count 6
Maximum Drain Source Resistance 70 mΩ
Channel Mode Enhancement
Maximum Gate Threshold Voltage 4V
Minimum Gate Threshold Voltage 2V
Maximum Power Dissipation 19 W
Transistor Configuration Single
Maximum Gate Source Voltage ±20 V
Number of Elements per Chip 1
Minimum Operating Temperature -55 °C
Width 1.35mm
Height 1mm
Series TrenchFET
Length 2.2mm
Maximum Operating Temperature +150 °C
Forward Diode Voltage 1.2V
Transistor Material Si
Typical Gate Charge @ Vgs 8.5 nC @ 10 V
3000 In stock for delivery within 5 working day(s)
Price (ex. GST) Each (On a Reel of 3000)
$ 0.70
(exc. GST)
$ 0.80
(inc. GST)
Per unit
Per Reel*
3000 +
*price indicative