- RS Stock No.:
- 178-3670
- Mfr. Part No.:
- SiDR392DP-T1-GE3
- Brand:
- Vishay Siliconix
3000 In stock for delivery within 7 working day(s)
Added
Price (ex. GST) Each (On a Reel of 3000)
$2.348
(exc. GST)
$2.70
(inc. GST)
Units | Per unit | Per Reel* |
3000 - 12000 | $2.348 | $7,044.00 |
15000 + | $2.113 | $6,339.00 |
*price indicative |
- RS Stock No.:
- 178-3670
- Mfr. Part No.:
- SiDR392DP-T1-GE3
- Brand:
- Vishay Siliconix
Technical data sheets
Legislation and Compliance
RoHS Status: Not Applicable
Product Details
TrenchFET® Gen IV power MOSFET
Top side cooling feature provides additional venue for thermal transfer
Optimized Qg, Qgd, and Qgd/Qgs ratio reduces switching related power loss
Top side cooling feature provides additional venue for thermal transfer
Optimized Qg, Qgd, and Qgd/Qgs ratio reduces switching related power loss
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
Specifications
Attribute | Value |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 100 A |
Maximum Drain Source Voltage | 30 V |
Package Type | PowerPAK SO-8DC |
Series | TrenchFET |
Mounting Type | Surface Mount |
Pin Count | 8 |
Maximum Drain Source Resistance | 900 μΩ |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 2.2V |
Minimum Gate Threshold Voltage | 1V |
Maximum Power Dissipation | 125 W |
Transistor Configuration | Single |
Maximum Gate Source Voltage | +20 V, +6 V |
Length | 5.99mm |
Typical Gate Charge @ Vgs | 125 nC @ 10 V |
Width | 5mm |
Number of Elements per Chip | 1 |
Maximum Operating Temperature | +150 °C |
Transistor Material | Si |
Height | 1.07mm |
Minimum Operating Temperature | -55 °C |
Forward Diode Voltage | 1.1V |