SiDR392DP-T1-GE3 N-Channel MOSFET, 100 A, 30 V TrenchFET, 8-Pin SO-8 Vishay Siliconix

Technical data sheets
Legislation and Compliance
RoHS Status: Not Applicable
COO (Country of Origin): CN
Product Details

TrenchFET® Gen IV power MOSFET
Top side cooling feature provides additional venue for thermal transfer
Optimized Qg, Qgd, and Qgd/Qgs ratio reduces switching related power loss

Attribute Value
Channel Type N
Maximum Continuous Drain Current 100 A
Maximum Drain Source Voltage 30 V
Package Type SO-8
Mounting Type Surface Mount
Pin Count 8
Maximum Drain Source Resistance 900 μΩ
Channel Mode Enhancement
Maximum Gate Threshold Voltage 2.2V
Minimum Gate Threshold Voltage 1V
Maximum Power Dissipation 125 W
Transistor Configuration Single
Maximum Gate Source Voltage +6 V, +20 V
Number of Elements per Chip 1
Maximum Operating Temperature +150 °C
Series TrenchFET
Height 1.07mm
Typical Gate Charge @ Vgs 125 nC @ 10 V
Minimum Operating Temperature -55 °C
Width 5mm
Transistor Material Si
Forward Diode Voltage 1.1V
Length 5.99mm
6000 In stock for delivery within 5 working day(s)
Price (ex. GST) Each (On a Reel of 3000)
$ 2.195
(exc. GST)
$ 2.524
(inc. GST)
Per unit
Per Reel*
3000 +
*price indicative