SiDR392DP-T1-GE3 N-Channel MOSFET, 100 A, 30 V TrenchFET, 8-Pin SO-8 Vishay Siliconix

Technical data sheets
Legislation and Compliance
RoHS Status: Not Applicable
COO (Country of Origin): CN
Product Details

TrenchFET® Gen IV power MOSFET
Top side cooling feature provides additional venue for thermal transfer
Optimized Qg, Qgd, and Qgd/Qgs ratio reduces switching related power loss

Attribute Value
Channel Type N
Maximum Continuous Drain Current 100 A
Maximum Drain Source Voltage 30 V
Maximum Drain Source Resistance 900 μΩ
Maximum Gate Threshold Voltage 2.2V
Minimum Gate Threshold Voltage 1V
Maximum Gate Source Voltage +6 V, +20 V
Package Type SO-8
Mounting Type Surface Mount
Transistor Configuration Single
Pin Count 8
Channel Mode Enhancement
Maximum Power Dissipation 125 W
Minimum Operating Temperature -55 °C
Number of Elements per Chip 1
Width 5mm
Length 5.99mm
Forward Diode Voltage 1.1V
Typical Gate Charge @ Vgs 125 nC @ 10 V
Height 1.07mm
Transistor Material Si
Series TrenchFET
Maximum Operating Temperature +150 °C
6000 In stock for delivery within 5 working day(s)
Price (ex. GST) Each (On a Reel of 3000)
$ 2.195
(exc. GST)
$ 2.524
(inc. GST)
Per unit
Per Reel*
3000 +
*price indicative