N-Channel MOSFET, 133 A, 40 V, 8-Pin PowerPAK SO-8 Vishay Siliconix SiR112DP-T1-RE3
- RS Stock No.:
- 178-3686
- Mfr. Part No.:
- SiR112DP-T1-RE3
- Brand:
- Vishay Siliconix
Discontinued product
- RS Stock No.:
- 178-3686
- Mfr. Part No.:
- SiR112DP-T1-RE3
- Brand:
- Vishay Siliconix
Technical data sheets
Legislation and Compliance
RoHS Status: Not Applicable
- COO (Country of Origin):
- CN
Product Details
TrenchFET® Gen IV power MOSFET
Qgd/Qgs ratio < 1 optimizes switching characteristics
Qgd/Qgs ratio < 1 optimizes switching characteristics
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 133 A |
| Maximum Drain Source Voltage | 40 V |
| Package Type | PowerPAK SO-8 |
| Mounting Type | Surface Mount |
| Pin Count | 8 |
| Maximum Drain Source Resistance | 2 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 1.1V |
| Minimum Gate Threshold Voltage | 2.4V |
| Maximum Power Dissipation | 62.5 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -16 V, +20 V |
| Typical Gate Charge @ Vgs | 59 nC @ 10 V |
| Length | 5.99mm |
| Transistor Material | Si |
| Maximum Operating Temperature | +150 °C |
| Width | 5mm |
| Number of Elements per Chip | 1 |
| Minimum Operating Temperature | -55 °C |
| Series | TrenchFET |
| Height | 1.07mm |
| Forward Diode Voltage | 1.1V |