SiRA12BDP-T1-GE3 N-Channel MOSFET, 60 A, 30 V TrenchFET, 8-Pin SO-8 Vishay Siliconix

Technical data sheets
Legislation and Compliance
RoHS Status: Not Applicable
COO (Country of Origin): CN
Product Details

TrenchFET® Gen IV power MOSFET

Specifications
Attribute Value
Channel Type N
Maximum Continuous Drain Current 60 A
Maximum Drain Source Voltage 30 V
Package Type SO-8
Mounting Type Surface Mount
Pin Count 8
Maximum Drain Source Resistance 6 mΩ
Channel Mode Enhancement
Maximum Gate Threshold Voltage 1.2V
Minimum Gate Threshold Voltage 2.4V
Maximum Power Dissipation 38 W
Transistor Configuration Single
Maximum Gate Source Voltage -16 V, +20 V
Number of Elements per Chip 1
Width 5mm
Minimum Operating Temperature -55 °C
Series TrenchFET
Maximum Operating Temperature +150 °C
Length 5.99mm
Forward Diode Voltage 1.1V
Transistor Material Si
Height 1.07mm
Typical Gate Charge @ Vgs 21 nC @ 10 V
6000 In stock for delivery within 5 working day(s)
Price (ex. GST) Each (On a Reel of 3000)
$ 0.506
(exc. GST)
$ 0.582
(inc. GST)
units
Per unit
Per Reel*
3000 +
$0.506
$1,518.00
*price indicative