Dual N-Channel MOSFET, 60 A, 30 V, 8-Pin PowerPAK SO-8 Vishay Siliconix SIRC06DP-T1-GE3
- RS Stock No.:
- 178-3691
- Mfr. Part No.:
- SIRC06DP-T1-GE3
- Brand:
- Vishay Siliconix
Available for back order.
Added
Price (ex. GST) Each (On a Reel of 3000)
$0.709
(exc. GST)
$0.815
(inc. GST)
| Units | Per unit | Per Reel* |
| 3000 - 12000 | $0.709 | $2,127.00 |
| 15000 + | $0.638 | $1,914.00 |
| *price indicative | ||
- RS Stock No.:
- 178-3691
- Mfr. Part No.:
- SIRC06DP-T1-GE3
- Brand:
- Vishay Siliconix
Technical data sheets
Legislation and Compliance
RoHS Status: Not Applicable
- COO (Country of Origin):
- CN
Product Details
TrenchFET® Gen IV power MOSFET
SkyFET® with monolithic Schottky diode
SkyFET® with monolithic Schottky diode
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 60 A |
| Maximum Drain Source Voltage | 30 V |
| Series | TrenchFET |
| Package Type | PowerPAK SO-8 |
| Mounting Type | Surface Mount |
| Pin Count | 8 |
| Maximum Drain Source Resistance | 4 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 1V |
| Minimum Gate Threshold Voltage | 2.1V |
| Maximum Power Dissipation | 50 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -16 V, +20 V |
| Typical Gate Charge @ Vgs | 38.5 nC @ 10 V |
| Length | 5.99mm |
| Transistor Material | Si |
| Width | 5mm |
| Number of Elements per Chip | 2 |
| Maximum Operating Temperature | +150 °C |
| Height | 1.07mm |
| Forward Diode Voltage | 0.7V |
| Minimum Operating Temperature | -55 °C |