SiS106DN-T1-GE3 N-Channel MOSFET, 16 A, 60 V TrenchFET, 8-Pin 1212 Vishay Siliconix

Technical data sheets
Legislation and Compliance
RoHS Status: Not Applicable
COO (Country of Origin): CN
Product Details

TrenchFET® Gen IV power MOSFET
Tuned for the lowest RDS - Qoss FOM

Attribute Value
Channel Type N
Maximum Continuous Drain Current 16 A
Maximum Drain Source Voltage 60 V
Package Type 1212
Mounting Type Surface Mount
Pin Count 8
Maximum Drain Source Resistance 20 mΩ
Channel Mode Enhancement
Maximum Gate Threshold Voltage 2V
Minimum Gate Threshold Voltage 4V
Maximum Power Dissipation 24 W
Transistor Configuration Single
Maximum Gate Source Voltage ±20 V
Number of Elements per Chip 1
Width 3.15mm
Forward Diode Voltage 1.2V
Height 1.07mm
Series TrenchFET
Maximum Operating Temperature +150 °C
Minimum Operating Temperature -55 °C
Length 3.15mm
Transistor Material Si
Typical Gate Charge @ Vgs 8.9 nC @ 10 V
6000 In stock for delivery within 5 working day(s)
Price (ex. GST) Each (On a Reel of 3000)
$ 0.80
(exc. GST)
$ 0.92
(inc. GST)
Per unit
Per Reel*
3000 +
*price indicative