SiZ350DT-T1-GE3 Dual N-Channel MOSFET, 30 A, 30 V TrenchFET, 8-Pin PowerPAIR 3 x 3 Vishay Siliconix

Technical data sheets
Legislation and Compliance
RoHS Status: Not Applicable
COO (Country of Origin): CN
Product Details

TrenchFET® Gen IV power MOSFET
High side and low side MOSFETs form optimized
combination for 50 % duty cycle
Optimized RDS - Qg and RDS - Qgd FOM elevates
efficiency for high frequency switching
Synchronous buck
DC/DC conversion
Half bridge

Attribute Value
Channel Type N
Maximum Continuous Drain Current 30 A
Maximum Drain Source Voltage 30 V
Package Type PowerPAIR 3 x 3
Mounting Type Surface Mount
Pin Count 8
Maximum Drain Source Resistance 9 mΩ
Channel Mode Enhancement
Maximum Gate Threshold Voltage 1V
Minimum Gate Threshold Voltage 2.4V
Maximum Power Dissipation 16.7 W
Maximum Gate Source Voltage -12 V, +16 V
Number of Elements per Chip 2
Series TrenchFET
Height 0.75mm
Typical Gate Charge @ Vgs 13.5 nC @ 10 V
Maximum Operating Temperature +150 °C
Transistor Material Si
Forward Diode Voltage 1.2V
Length 3mm
Width 3mm
Minimum Operating Temperature -55 °C
6000 In stock for delivery within 5 working day(s)
Price (ex. GST) Each (On a Reel of 3000)
$ 0.85
(exc. GST)
$ 0.98
(inc. GST)
Per unit
Per Reel*
3000 +
*price indicative