- RS Stock No.:
- 178-3715
- Mfr. Part No.:
- SQD40031EL_GE3
- Brand:
- Vishay Siliconix
This product is currently unavailable to backorder.
Unfortunately, we don’t have this product in stock and it’s not available to backorder at this time.
Price (ex. GST) Each (On a Reel of 2000)
$1.531
(exc. GST)
$1.761
(inc. GST)
units | Per unit | Per Reel* |
2000 - 8000 | $1.531 | $3,062.00 |
10000 + | $1.481 | $2,962.00 |
*price indicative |
- RS Stock No.:
- 178-3715
- Mfr. Part No.:
- SQD40031EL_GE3
- Brand:
- Vishay Siliconix
Technical data sheets
Legislation and Compliance
RoHS Status: Not Applicable
Product Details
Vishay MOSFET
The Vishay surface mount P-channel MOSFET is a new age product with a drain-source voltage of 30V and a maximum gate-source voltage of 20V. It has drain-source resistance of 3.2mohms at a gate-source voltage of 10V. It has a maximum power dissipation of 136W and continuous drain current of 100A. It has a minimum and a maximum driving voltage of 4.5V and 10V. It is used in automotive applications. The MOSFET has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.
Features and Benefits
• Halogen free
• Lead (Pb) free
• Operating temperature ranges between -55°C and 175°C
• TrenchFET power MOSFET
• Lead (Pb) free
• Operating temperature ranges between -55°C and 175°C
• TrenchFET power MOSFET
Certifications
• AEC-Q101
• ANSI/ESD S20.20:2014
• BS EN 61340-5-1:2007
• Rg tested
• UIS tested
• ANSI/ESD S20.20:2014
• BS EN 61340-5-1:2007
• Rg tested
• UIS tested
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
Specifications
Attribute | Value |
---|---|
Channel Type | P |
Maximum Continuous Drain Current | 100 A |
Maximum Drain Source Voltage | 30 V |
Package Type | DPAK (TO-252) |
Mounting Type | Surface Mount |
Pin Count | 3 |
Maximum Drain Source Resistance | 5 mΩ |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 2.5V |
Minimum Gate Threshold Voltage | 1.5V |
Maximum Power Dissipation | 136 W |
Transistor Configuration | Single |
Maximum Gate Source Voltage | ±20 V |
Typical Gate Charge @ Vgs | 186 nC @ 10 V |
Number of Elements per Chip | 1 |
Maximum Operating Temperature | +175 °C |
Transistor Material | Si |
Length | 6.73mm |
Width | 2.38mm |
Height | 6.22mm |
Minimum Operating Temperature | -55 °C |
Series | TrenchFET |
Forward Diode Voltage | 1.5V |