P-Channel MOSFET, 30 A, 40 V, 4-Pin PowerPAK SO-8L Vishay Siliconix SQJ415EP-T1_GE3
- RS Stock No.:
- 178-3717
- Mfr. Part No.:
- SQJ415EP-T1_GE3
- Brand:
- Vishay Siliconix
On back order for despatch 05/05/2025, delivery within 7 working days from despatch date.
Added
Price (ex. GST) Each (On a Reel of 3000)
$0.738
(exc. GST)
$0.849
(inc. GST)
| Units | Per unit | Per Reel* |
| 3000 - 12000 | $0.738 | $2,214.00 |
| 15000 + | $0.664 | $1,992.00 |
| *price indicative | ||
- RS Stock No.:
- 178-3717
- Mfr. Part No.:
- SQJ415EP-T1_GE3
- Brand:
- Vishay Siliconix
Technical data sheets
Legislation and Compliance
RoHS Status: Not Applicable
- COO (Country of Origin):
- CN
Product Details
TrenchFET® power MOSFET
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
Specifications
Attribute | Value |
|---|---|
| Channel Type | P |
| Maximum Continuous Drain Current | 30 A |
| Maximum Drain Source Voltage | 40 V |
| Series | TrenchFET |
| Package Type | PowerPAK SO-8L |
| Mounting Type | Surface Mount |
| Pin Count | 4 |
| Maximum Drain Source Resistance | 20 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 2.5V |
| Minimum Gate Threshold Voltage | 1.5V |
| Maximum Power Dissipation | 45 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | ±20 V |
| Number of Elements per Chip | 1 |
| Typical Gate Charge @ Vgs | 63 nC @ 10 V |
| Width | 5mm |
| Length | 5.99mm |
| Maximum Operating Temperature | +175 °C |
| Transistor Material | Si |
| Height | 1.07mm |
| Automotive Standard | AEC-Q101 |
| Minimum Operating Temperature | -55 °C |
| Forward Diode Voltage | 1.2V |