SQJ431AEP-T1_GE3 P-Channel MOSFET, 9.4 A, 200 V TrenchFET, 8-Pin SO-8 Vishay Siliconix

Technical data sheets
Legislation and Compliance
RoHS Status: Not Applicable
COO (Country of Origin): CN
Product Details

TrenchFET® power MOSFET

Specifications
Attribute Value
Channel Type P
Maximum Continuous Drain Current 9.4 A
Maximum Drain Source Voltage 200 V
Maximum Drain Source Resistance 760 mΩ
Maximum Gate Threshold Voltage 3.5V
Minimum Gate Threshold Voltage 2.5V
Maximum Gate Source Voltage ±20 V
Package Type SO-8
Mounting Type Surface Mount
Pin Count 8
Transistor Configuration Single
Channel Mode Enhancement
Maximum Power Dissipation 68 W
Typical Gate Charge @ Vgs 55 nC @ 10 V
Automotive Standard AEC-Q101
Transistor Material Si
Minimum Operating Temperature -55 °C
Number of Elements per Chip 1
Width 5mm
Height 1.07mm
Series TrenchFET
Maximum Operating Temperature +175 °C
Length 5.99mm
Forward Diode Voltage 1.2V
On back order for despatch 25/03/2020, delivery within 5 working days from despatch date.
Price (ex. GST) Each (On a Reel of 3000)
$ 1.45
(exc. GST)
$ 1.67
(inc. GST)
units
Per unit
Per Reel*
3000 +
$1.45
$4,350.00
*price indicative