SQJ431AEP-T1_GE3 P-Channel MOSFET, 9.4 A, 200 V TrenchFET, 8-Pin SO-8 Vishay Siliconix

Technical data sheets
Legislation and Compliance
RoHS Status: Not Applicable
COO (Country of Origin): CN
Product Details

TrenchFET® power MOSFET

Specifications
Attribute Value
Channel Type P
Maximum Continuous Drain Current 9.4 A
Maximum Drain Source Voltage 200 V
Package Type SO-8
Mounting Type Surface Mount
Pin Count 8
Maximum Drain Source Resistance 760 mΩ
Channel Mode Enhancement
Maximum Gate Threshold Voltage 3.5V
Minimum Gate Threshold Voltage 2.5V
Maximum Power Dissipation 68 W
Transistor Configuration Single
Maximum Gate Source Voltage ±20 V
Number of Elements per Chip 1
Minimum Operating Temperature -55 °C
Maximum Operating Temperature +175 °C
Series TrenchFET
Height 1.07mm
Typical Gate Charge @ Vgs 55 nC @ 10 V
Length 5.99mm
Forward Diode Voltage 1.2V
Automotive Standard AEC-Q101
Transistor Material Si
Width 5mm
On back order for despatch 26/08/2020, delivery within 5 working days from despatch date.
Price (ex. GST) Each (On a Reel of 3000)
$ 1.436
(exc. GST)
$ 1.651
(inc. GST)
units
Per unit
Per Reel*
3000 +
$1.436
$4,308.00
*price indicative