SQM40022E_GE3 N-Channel MOSFET, 150 A, 40 V TrenchFET, 3 + Tab-Pin D2PAK Vishay Siliconix

Technical data sheets
Legislation and Compliance
RoHS Status: Not Applicable
COO (Country of Origin): TW
Product Details

TrenchFET® power MOSFET
Package with low thermal resistance

Specifications
Attribute Value
Channel Type N
Maximum Continuous Drain Current 150 A
Maximum Drain Source Voltage 40 V
Maximum Drain Source Resistance 3 mΩ
Maximum Gate Threshold Voltage 2.5V
Minimum Gate Threshold Voltage 3.5V
Maximum Gate Source Voltage ±20 V
Package Type D2PAK (TO-263)
Mounting Type Surface Mount
Pin Count 3 + Tab
Transistor Configuration Single
Channel Mode Enhancement
Maximum Power Dissipation 150 W
Minimum Operating Temperature -55 °C
Width 4.83mm
Number of Elements per Chip 1
Automotive Standard AEC-Q101
Typical Gate Charge @ Vgs 106 nC @ 10 V
Height 11.3mm
Series TrenchFET
Maximum Operating Temperature +175 °C
Length 10.67mm
Forward Diode Voltage 1.5V
Transistor Material Si
800 In stock for delivery within 5 working day(s)
Price (ex. GST) Each (On a Reel of 800)
$ 1.875
(exc. GST)
$ 2.156
(inc. GST)
units
Per unit
Per Reel*
800 +
$1.875
$1,500.00
*price indicative