SQJ415EP-T1_GE3 P-Channel MOSFET, 30 A, 40 V TrenchFET, 8-Pin SO-8 Vishay Siliconix

Technical data sheets
Legislation and Compliance
RoHS Status: Not Applicable
COO (Country of Origin): CN
Product Details

TrenchFET® power MOSFET

Specifications
Attribute Value
Channel Type P
Maximum Continuous Drain Current 30 A
Maximum Drain Source Voltage 40 V
Package Type SO-8
Mounting Type Surface Mount
Pin Count 8
Maximum Drain Source Resistance 20 mΩ
Channel Mode Enhancement
Maximum Gate Threshold Voltage 2.5V
Minimum Gate Threshold Voltage 1.5V
Maximum Power Dissipation 45 W
Transistor Configuration Single
Maximum Gate Source Voltage ±20 V
Number of Elements per Chip 1
Width 5mm
Series TrenchFET
Height 1.07mm
Transistor Material Si
Forward Diode Voltage 1.2V
Automotive Standard AEC-Q101
Typical Gate Charge @ Vgs 63 nC @ 10 V
Minimum Operating Temperature -55 °C
Length 5.99mm
Maximum Operating Temperature +175 °C
2850 In stock for delivery within 5 working day(s)
Price (ex. GST) Each (Supplied on a Reel) Quantities below 150 on continuous strip
$ 1.101
(exc. GST)
$ 1.266
(inc. GST)
units
Per unit
100 - 475
$1.101
500 - 975
$0.918
1000 +
$0.787
Packaging Options: