SQJ415EP-T1_GE3 P-Channel MOSFET, 30 A, 40 V TrenchFET, 8-Pin SO-8 Vishay Siliconix

Technical data sheets
Legislation and Compliance
RoHS Status: Not Applicable
COO (Country of Origin): CN
Product Details


The Vishay surface mount P-channel MOSFET is a new age product with a drain-source voltage of 40V and a maximum gate-source voltage of 20V. It has drain-source resistance of 14mohms at a gate-source voltage of 10V. It has a maximum power dissipation of 45W and continuous drain current of 30A. It has a minimum and a maximum driving voltage of 4.5V and 10V. It is used in automotive applications. The MOSFET has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits

• Halogen free
• Lead (Pb) free
• Operating temperature ranges between -55°C and 175°C
• TrenchFET power MOSFET


• AEC-Q101
• ANSI/ESD S20.20:2014
• BS EN 61340-5-1:2007
• Rg tested
• UIS tested

Attribute Value
Channel Type P
Maximum Continuous Drain Current 30 A
Maximum Drain Source Voltage 40 V
Maximum Drain Source Resistance 20 mΩ
Maximum Gate Threshold Voltage 2.5V
Minimum Gate Threshold Voltage 1.5V
Maximum Gate Source Voltage ±20 V
Package Type SO-8
Mounting Type Surface Mount
Transistor Configuration Single
Pin Count 8
Channel Mode Enhancement
Maximum Power Dissipation 45 W
Height 1.07mm
Transistor Material Si
Series TrenchFET
Length 5.99mm
Maximum Operating Temperature +175 °C
Width 5mm
Typical Gate Charge @ Vgs 63 nC @ 10 V
Automotive Standard AEC-Q101
Forward Diode Voltage 1.2V
Number of Elements per Chip 1
Minimum Operating Temperature -55 °C
2950 In stock for delivery within 5 working day(s)
Price (ex. GST) Each (Supplied on a Reel) Quantities below 150 on continuous strip
$ 1.048
(exc. GST)
$ 1.205
(inc. GST)
Per unit
100 - 475
500 - 975
1000 +
Packaging Options: